TY - JOUR
T1 - Numerical investigation of on-chip wavelength conversion based on InP/In1−xGaxAsyP1−y semiconductor waveguide platforms
AU - Wen, Jin
AU - Li, Kang
AU - Gong, Yongkang
AU - Copner, Bethan
AU - Hughes, Ben
AU - Campbell, Michael A.
AU - Lazzaini, Mattia
AU - Duan, Lina
AU - Ma, Chengju
AU - Fan, Wei
AU - Jia, Zhenan
AU - Fu, Haiwei
AU - Copner, Nigel
N1 - Funding Information:
This work was supported by the National Natural Science Foundation of China under Grant No. 61505160 , the Innovation Capability Support Program of Shaanxi China (Program No. 2018KJXX-042 ), the Natural Science Basic Research Program of Shaanxi China (Program No. 2019JM-084 ), the 2015 Foshan Technology Innovation Group Project (Advanced Solid State Light Source Application and Innovation Team) and the National Physical Laboratory Directors’ Science and Engineering Fund Investigators Award UK (project number 06. 2019).
Publisher Copyright:
© 2020
PY - 2020/10/15
Y1 - 2020/10/15
N2 - We design the high confinement InP/In1−xGaxAsyP1−y semiconductor waveguides and investigate the effective wavelength conversion based on this platform. Efficient confinement and mode field area fluctuation at different wavelength is analyzed to achieve the high nonlinear coefficient. The numerical results show that nearly zero phase-mismatch condition can be satisfied through dispersion tailoring of InP/In1−xGaxAsyP1−y waveguides, and the wavelength conversion ranging over 40 nm with the maximum conversion efficiency −26.3 dB is achieved. Meanwhile, the influences of the doping parameter y and pumping wavelength on the bandwidth and conversion efficiency are also discussed and optimized. Our demonstration of the excellent all-optical wavelength conversion properties of the InP/In1−xGaxAsyP1−y waveguides could pave the way towards direct integration telecom band devices on stand semiconductor platforms.
AB - We design the high confinement InP/In1−xGaxAsyP1−y semiconductor waveguides and investigate the effective wavelength conversion based on this platform. Efficient confinement and mode field area fluctuation at different wavelength is analyzed to achieve the high nonlinear coefficient. The numerical results show that nearly zero phase-mismatch condition can be satisfied through dispersion tailoring of InP/In1−xGaxAsyP1−y waveguides, and the wavelength conversion ranging over 40 nm with the maximum conversion efficiency −26.3 dB is achieved. Meanwhile, the influences of the doping parameter y and pumping wavelength on the bandwidth and conversion efficiency are also discussed and optimized. Our demonstration of the excellent all-optical wavelength conversion properties of the InP/In1−xGaxAsyP1−y waveguides could pave the way towards direct integration telecom band devices on stand semiconductor platforms.
KW - Four-wave mixing
KW - InP/InGaAsP waveguide
KW - Nonlinear optics
KW - Wavelength conversion
UR - http://www.scopus.com/inward/record.url?scp=85083333871&partnerID=8YFLogxK
U2 - 10.1016/j.optcom.2020.125921
DO - 10.1016/j.optcom.2020.125921
M3 - Article
AN - SCOPUS:85083333871
SN - 0030-4018
VL - 473
JO - Optics Communications
JF - Optics Communications
M1 - 125921
ER -